Silicon and III-V compound nanotubes: Structural and electronic properties

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چکیده

منابع مشابه

Silicon and III-V compound nanotubes: Structural and electronic properties

Unusual physical properties of single-wall carbon nanotubes have started a search for similar tubular structures of other elements. In this paper, we present a theoretical analysis of single-wall nanotubes of silicon and group-III-V compounds. Starting from precursor graphenelike structures we investigated the stability, energetics, and electronic structure of zigzag and armchair tubes using th...

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investigation of the electronic properties of carbon and iii-v nanotubes

boron nitride semiconducting zigzag swcnt, $b_{cb}$$n_{cn}$$c_{1-cb-cn}$, as a potential candidate for making nanoelectronic devices was examined. in contrast to the previous dft calculations, wherein just one boron and nitrogen doping configuration have been considered, here for the average over all possible configurations, density of states (dos) was calculated in terms of boron and nitrogen ...

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A density functional theory study of the structural and electronic properties and relative stability of narrow hydrogen passivated sp(3) silicon nanotubes of different growth orientations is presented. All nanotubes studied and their corresponding wire structures are found to be meta-stable with the wires being more energetically stable. Silicon nanotubes show a dramatic bandgap increase of up ...

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ژورنال

عنوان ژورنال: Physical Review B

سال: 2005

ISSN: 1098-0121,1550-235X

DOI: 10.1103/physrevb.72.075420